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Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide

In this paper, we investigate the synthesis of WSe(2) by chemical vapor deposition and study the current transport and device scaling of monolayer WSe(2). We found that the device characteristics of the back-gated WSe(2) transistors with thick oxides are very sensitive to the applied drain bias, esp...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Yao, Zihan, Liu, Jialun, Xu, Kai, Chow, Edmond K. C., Zhu, Wenjuan
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5869716/
https://ncbi.nlm.nih.gov/pubmed/29588469
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-23501-4
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