A carregar...
Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide
In this paper, we investigate the synthesis of WSe(2) by chemical vapor deposition and study the current transport and device scaling of monolayer WSe(2). We found that the device characteristics of the back-gated WSe(2) transistors with thick oxides are very sensitive to the applied drain bias, esp...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5869716/ https://ncbi.nlm.nih.gov/pubmed/29588469 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-23501-4 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|