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Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy
Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electr...
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| Yayımlandı: | Phys Rev B |
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| Asıl Yazarlar: | , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
2017
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5846628/ https://ncbi.nlm.nih.gov/pubmed/29541699 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1103/PhysRevB.96.195437 |
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