Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electr...

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Detaylı Bibliyografya
Yayımlandı:Phys Rev B
Asıl Yazarlar: Hill, Heather M., Rigosi, Albert F., Chowdhury, Sugata, Yang, Yanfei, Nguyen, Nhan V., Tavazza, Francesca, Elmquist, Randolph E., Newell, David B., Hight Walker, Angela R.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: 2017
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Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC5846628/
https://ncbi.nlm.nih.gov/pubmed/29541699
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1103/PhysRevB.96.195437
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