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Thickness-modulated metal-to-semiconductor transformation in a transition metal dichalcogenide
The possibility of tailoring physical properties by changing the number of layers in van der Waals crystals is one of the driving forces behind the emergence of two-dimensional materials. One example is bulk MoS(2), which changes from an indirect gap semiconductor to a direct bandgap semiconductor i...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5834615/ https://ncbi.nlm.nih.gov/pubmed/29500434 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-018-03436-0 |
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