Loading...

Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films

The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining...

Full description

Saved in:
Bibliographic Details
Published in:Sci Rep
Main Authors: Barnes, Benjamin Kerr, Das, Kausik S.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group UK 2018
Subjects:
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC5794968/
https://ncbi.nlm.nih.gov/pubmed/29391500
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-20598-5
Tags: Add Tag
No Tags, Be the first to tag this record!