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Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge–Si alloys
We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge(100−x)Si(x) (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is...
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| Veröffentlicht in: | Philos Trans A Math Phys Eng Sci |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
The Royal Society Publishing
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5784096/ https://ncbi.nlm.nih.gov/pubmed/29311204 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1098/rsta.2017.0205 |
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