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Anomalous Hall-like effect probe of antiferromagnetic domain wall
Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y(3)Fe(5)O(12)/Ni(0.50)Co(0.50)O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. T...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5762948/ https://ncbi.nlm.nih.gov/pubmed/29321481 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-18514-4 |
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