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Room-Temperature H(2) Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H(2) gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a sim...
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| Vydáno v: | Sensors (Basel) |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5751383/ https://ncbi.nlm.nih.gov/pubmed/29182573 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17122750 |
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