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Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measu...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5744331/ https://ncbi.nlm.nih.gov/pubmed/29211028 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10121396 |
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