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Proton dose distribution measurements using a MOSFET detector with a simple dose‐weighted correction method for LET effects
We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth‐dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high‐bias voltages....
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| Publicat a: | J Appl Clin Med Phys |
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| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
John Wiley and Sons Inc.
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5718688/ https://ncbi.nlm.nih.gov/pubmed/21587191 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1120/jacmp.v12i2.3431 |
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