A carregar...
Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In(0.2)Ga(0.8)N/GaN Quantum Wells of Blue LEDs
The features of eight-period In(0.2)Ga(0.8)N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In(0.02)Ga(0.98)N/GaN superlat...
Na minha lista:
| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5680389/ https://ncbi.nlm.nih.gov/pubmed/29124372 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2359-3 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|