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The photoelastic coefficient [Formula: see text] of H(+) implanted GaAs as a function of defect density
The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, det...
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| Publicado en: | Sci Rep |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5680326/ https://ncbi.nlm.nih.gov/pubmed/29123121 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-14903-x |
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