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Effect of MgO Underlying Layer on the Growth of GaO(x) Tunnel Barrier in Epitaxial Fe/GaO(x)/(MgO)/Fe Magnetic Tunnel Junction Structure
We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaO(x) tunnel barrier in Fe/GaO(x)/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C unde...
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| Gepubliceerd in: | Sensors (Basel) |
|---|---|
| Hoofdauteurs: | , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2017
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5677435/ https://ncbi.nlm.nih.gov/pubmed/29065516 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17102424 |
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