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Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening...
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| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5666037/ https://ncbi.nlm.nih.gov/pubmed/29093549 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-14009-4 |
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