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Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator
Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously...
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| Pubblicato in: | Exp Neurobiol |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
The Korean Society for Brain and Neural Science
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5661057/ https://ncbi.nlm.nih.gov/pubmed/29093633 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.5607/en.2017.26.5.241 |
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