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Evidence of indirect gap in monolayer WSe(2)
Monolayer transition metal dichalcogenides, such as MoS(2) and WSe(2), have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5640683/ https://ncbi.nlm.nih.gov/pubmed/29030548 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-01012-6 |
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