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Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation
The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur fr...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5634465/ https://ncbi.nlm.nih.gov/pubmed/28993688 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-13212-7 |
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