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Ultrasensitive all-2D MoS(2) phototransistors enabled by an out-of-plane MoS(2) PN homojunction

Two-dimensional transition metal dichalcogenide-based photodetectors have demonstrated potential for the next generation of 2-dimensional optoelectronics. However, to date, their sensitivity has not been superior to that of other technologies. Here we report an ultrasensitive two-dimensional photode...

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Détails bibliographiques
Publié dans:Nat Commun
Auteurs principaux: Huo, Nengjie, Konstantatos, Gerasimos
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2017
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5603552/
https://ncbi.nlm.nih.gov/pubmed/28924234
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00722-1
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