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Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal co...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sensors (Basel)
Päätekijät: Liu, Jianqiao, Gao, Yinglin, Wu, Xu, Jin, Guohua, Zhai, Zhaoxia, Liu, Huan
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2017
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5579549/
https://ncbi.nlm.nih.gov/pubmed/28796167
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17081852
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