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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are...
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| Publicado en: | Materials (Basel) |
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| Autor principal: | |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5578241/ https://ncbi.nlm.nih.gov/pubmed/28773227 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10080875 |
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