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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are...

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Bibliografski detalji
Izdano u:Materials (Basel)
Glavni autor: Hamada, Hiroki
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2017
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5578241/
https://ncbi.nlm.nih.gov/pubmed/28773227
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10080875
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