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Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles
Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various size...
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| Publicado no: | Nanomaterials (Basel) |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5575713/ https://ncbi.nlm.nih.gov/pubmed/28829388 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7080231 |
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