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Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles

Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various size...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Gandhi, Ashish Chhaganlal, Wu, Sheng Yun
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5575713/
https://ncbi.nlm.nih.gov/pubmed/28829388
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7080231
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