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Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions
MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite thin film deposition were optimized before device fabrication. The infrared properties and...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5548700/ https://ncbi.nlm.nih.gov/pubmed/28791665 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2250-2 |
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