A carregar...
High-quality AlN grown with a single substrate temperature below 1200 °C
1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH(3)-flow condition, serving as an alternative for the commonly us...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5541044/ https://ncbi.nlm.nih.gov/pubmed/28769071 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-07616-8 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|