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Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded Al(x)Ga(1−x)N Buffer Layer
The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known t...
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| Опубликовано в: : | Sensors (Basel) |
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| Главные авторы: | , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2017
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5539806/ https://ncbi.nlm.nih.gov/pubmed/28753989 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17071684 |
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