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Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach
We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial...
Guardat en:
| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5521308/ https://ncbi.nlm.nih.gov/pubmed/28811438 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma6083309 |
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