Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial...

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Bibliographic Details
Published in:Materials (Basel)
Main Authors: Kangawa, Yoshihiro, Akiyama, Toru, Ito, Tomonori, Shiraishi, Kenji, Nakayama, Takashi
Format: Artigo
Language:Inglês
Published: MDPI 2013
Subjects:
Review
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC5521308/
https://ncbi.nlm.nih.gov/pubmed/28811438
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma6083309
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