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Progress to a Gallium-Arsenide Deep-Center Laser
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known...
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| Udgivet i: | Materials (Basel) |
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| Hovedforfatter: | |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Molecular Diversity Preservation International
2009
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5513387/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma2041599 |
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