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Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO(2) single crystals
The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO(2) t...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5509748/ https://ncbi.nlm.nih.gov/pubmed/28706304 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05651-z |
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