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Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs
We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm [Formula: see text] ·V [Formula: see text] ·s [Formula: see text] a turn-on voltage of −0.8 V...
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| Publicado en: | Materials (Basel) |
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| Autores principales: | , , , , , , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5509041/ https://ncbi.nlm.nih.gov/pubmed/28773743 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9080623 |
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