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Self-compensation in arsenic doping of CdTe
Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2017
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5496905/ https://ncbi.nlm.nih.gov/pubmed/28676701 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04719-0 |
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