Multi-layered NiO(y)/NbO(x)/NiO(y) fast drift-free threshold switch with high I(on)/I(off) ratio for selector application

NbO(2) has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO(2) follows the field-induced nucleation by investigating the delay time dependency at various volt...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Park, Jaehyuk, Hadamek, Tobias, Posadas, Agham B., Cha, Euijun, Demkov, Alexander A., Hwang, Hyunsang
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5481432/
https://ncbi.nlm.nih.gov/pubmed/28642471
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04529-4
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