A carregar...
Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5479854/ https://ncbi.nlm.nih.gov/pubmed/28638136 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04299-z |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|