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Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors
Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor...
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| Pubblicato in: | Sensors (Basel) |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5469527/ https://ncbi.nlm.nih.gov/pubmed/28468324 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17051004 |
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