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Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO(2) as a Gate Dielectric
This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO(2)) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal a...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5457203/ https://ncbi.nlm.nih.gov/pubmed/28773982 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma9110861 |
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