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In Situ Hall Effect Monitoring of Vacuum Annealing of In(2)O(3):H Thin Films
Hydrogen doped In(2)O(3) thin films were prepared by room temperature sputter deposition with the addition of H(2)O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm(2)/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex s...
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| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5455274/ https://ncbi.nlm.nih.gov/pubmed/28787957 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma8020561 |
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