Loading...
Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes
A metalorganic vapor phase epitaxy-grown InGaN/GaN multiple-quantum-well (MQW) with three graded-thickness wells (the first-grown well had the greatest width) near the n-GaN was used as the active layer of an LED. For LEDs with an asymmetric quantum well (AQW), high-resolution X-ray diffraction and...
Na minha lista:
| Udgivet i: | Materials (Basel) |
|---|---|
| Main Authors: | , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2014
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5453200/ https://ncbi.nlm.nih.gov/pubmed/28788647 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma7053758 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|