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Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upo...

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Publicat a:Materials (Basel)
Autors principals: Sun, Jian, Kosel, Jürgen
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2013
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5452084/
https://ncbi.nlm.nih.gov/pubmed/28809321
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma6020500
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