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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5449059/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma5122917 |
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