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Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording
In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical charac...
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| Publicado no: | Sensors (Basel) |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5421665/ https://ncbi.nlm.nih.gov/pubmed/28350370 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17040705 |
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