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Field-free magnetization reversal by spin-Hall effect and exchange bias

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particul...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: van den Brink, A., Vermijs, G., Solignac, A., Koo, J., Kohlhepp, J. T., Swagten, H. J. M., Koopmans, B.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5411711/
https://ncbi.nlm.nih.gov/pubmed/26940861
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10854
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