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Driving a GaAs film to a large-gap topological insulator by tensile strain
Search for materials with a large nontrivial band gap is quite crucial for the realization of the devices using quantum spin Hall (QSH) effects. From first-principles calculations combined with a tight-binding (TB) model, we demonstrate that a trivial GaAs film with atomic thickness can be driven to...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5389133/ https://ncbi.nlm.nih.gov/pubmed/25676173 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep08441 |
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