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Transfer free graphene growth on SiO(2) substrate at 250 °C
Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO(2) covered Si (SiO(2)/Si) substrate at 250 °C based on a solid-liqu...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5333118/ https://ncbi.nlm.nih.gov/pubmed/28251997 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep43756 |
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