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Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics
[Image: see text] We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasin...
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| 出版年: | ACS Appl Mater Interfaces |
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| 主要な著者: | , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
American
Chemical Society
2017
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| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5330653/ https://ncbi.nlm.nih.gov/pubmed/28084725 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.6b14934 |
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