Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

[Image: see text] We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasin...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:ACS Appl Mater Interfaces
Prif Awduron: Nugraha, Mohamad I., Häusermann, Roger, Watanabe, Shun, Matsui, Hiroyuki, Sytnyk, Mykhailo, Heiss, Wolfgang, Takeya, Jun, Loi, Maria A.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: American Chemical Society 2017
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC5330653/
https://ncbi.nlm.nih.gov/pubmed/28084725
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.6b14934
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