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Properties of Doped GaSb Whiskers at Low Temperatures
Temperature dependencies of GaSb whiskers’ resistance doped with Te to concentration of 1.7 × 10(18) cm(−3) were measured in temperature range 1.5–300 K. At 4.2 K temperature, a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two proce...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5328892/ https://ncbi.nlm.nih.gov/pubmed/28249370 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1923-1 |
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