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Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis
The V-pits and potential fluctuations in InGaN/GaN multiple quantum wells (MQWs) are key factors for understanding the performance of InGaN/GaN-based light-emitting diodes (LEDs). However, photoluminescence (PL) measurements using conventional optical microscopy only provide ensemble information due...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5304185/ https://ncbi.nlm.nih.gov/pubmed/28198804 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep42221 |
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