Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe(81)Ga(19)

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe(81)Ga(19). The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystallin...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Beardsley, R. P., Parkes, D. E., Zemen, J., Bowe, S., Edmonds, K. W., Reardon, C., Maccherozzi, F., Isakov, I., Warburton, P. A., Campion, R. P., Gallagher, B. L., Cavill, S. A., Rushforth, A. W.
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2017
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5301210/
https://ncbi.nlm.nih.gov/pubmed/28186114
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep42107
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