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Imperfect two-dimensional topological insulator field-effect transistors
To overcome the challenge of using two-dimensional materials for nanoelectronic devices, we propose two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering. We model transistors made of two-dimensional topological insulator ribbons accounting...
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| Veröffentlicht in: | Nat Commun |
|---|---|
| Hauptverfasser: | , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5263869/ https://ncbi.nlm.nih.gov/pubmed/28106059 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms14184 |
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