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Purely antiferromagnetic magnetoelectric random access memory
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing...
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| 出版年: | Nat Commun |
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| 主要な著者: | , , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2017
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5216083/ https://ncbi.nlm.nih.gov/pubmed/28045029 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13985 |
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