Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Kosub, Tobias, Kopte, Martin, Hühne, Ruben, Appel, Patrick, Shields, Brendan, Maletinsky, Patrick, Hübner, René, Liedke, Maciej Oskar, Fassbender, Jürgen, Schmidt, Oliver G., Makarov, Denys
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2017
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5216083/
https://ncbi.nlm.nih.gov/pubmed/28045029
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13985
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