Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Nat Commun
Autors principals: Kosub, Tobias, Kopte, Martin, Hühne, Ruben, Appel, Patrick, Shields, Brendan, Maletinsky, Patrick, Hübner, René, Liedke, Maciej Oskar, Fassbender, Jürgen, Schmidt, Oliver G., Makarov, Denys
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2017
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5216083/
https://ncbi.nlm.nih.gov/pubmed/28045029
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13985
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars