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Temperature-driven topological quantum phase transitions in a phase-change material Ge(2)Sb(2)Te(5)
The Ge(2)Sb(2)Te(5) is a phase-change material widely used in optical memory devices and is a leading candidate for next generation non-volatile random access memory devices which are key elements of various electronics and portable systems. Despite the compound is under intense investigation its el...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5153837/ https://ncbi.nlm.nih.gov/pubmed/27958321 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38799 |
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