טוען...
Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol
In this work, the coexistence of Write Once Read Many Memory (WORM) and memristor can be achieved in a single device of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT: PSS) and Polyvinyl Alcohol (PVA) blend organic memory system. In memristor mode, the bistable resistance states of t...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2016
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5150231/ https://ncbi.nlm.nih.gov/pubmed/27941830 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38816 |
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