Depth resolved lattice-charge coupling in epitaxial BiFeO(3) thin film

For epitaxial films, a critical thickness (t(c)) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t(c) in BiFeO(3) thin films acts as a boundary to determine the crystalline phase, ferroelectricity, an...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Lee, Hyeon Jun, Lee, Sung Su, Kwak, Jeong Hun, Kim, Young-Min, Jeong, Hu Young, Borisevich, Albina Y., Lee, Su Yong, Noh, Do Young, Kwon, Owoong, Kim, Yunseok, Jo, Ji Young
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2016
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5144002/
https://ncbi.nlm.nih.gov/pubmed/27929103
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38724
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